3W 1470nm Ib Emitter Laser Chip
3W 1470nm Ib Emitter Laser Chip yog InP-based Unmounted Diode Laser Chip uas ua haujlwm ntawm 1450 txog 1490 nm. Nws muab 3 W ntawm lub zog thiab muaj kev ua haujlwm ntau dua 23%. Qhov no TE polarized laser diode nti muaj qhov dav dav ntawm tsawg dua 20 nm (FWHM). Nws muaj ib qho emitter uas muaj qhov dav ntawm 100 μm. 3W 1470nm Ib Leeg Emitter Laser Chip yuav tsum muaj DC mov ntawm 1.6 V thiab siv tsawg dua 9 A ntawm tam sim no. Nws yog tsim nrog Brandnew's InP epitaxy txheej thiab yog qhov zoo tagnrho rau kev kho mob, kev zoo nkauj, teeb pom kev zoo, thiab cov ntaub ntawv ua haujlwm.
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Muaj nyob hauv COS
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Siab ruaj khov
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AuSn sib txuas
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Kev ua raws li RoHS
Daim ntawv qhia
Yam khoom: LC1470SE3
| Kho qhov muag | |
| Center Wavelengt | 1470nm ua |
| Optical zog | 3W |
| Ua hauj lwm hom | CW |
| Spectrum Dav | 10nm ua |
| Emitter Dav | 100 um |
| Cavity Length | 2000 ua |
| Chip Dav | 500 ua |
| Thickness | 150 ua |
| Fast Axis Divergence (FWHM) | 35 Deg |
| Slow Axis Divergence (FWHM) | 10 Deg |
| Slope Efficiency | 0.35W/A |
| Hluav taws xob | |
| Threshold Current Ith | 0.5A |
| Kev khiav hauj lwm tam sim no Iop | 9A |
| Ua haujlwm Voltage Vop | 1.6V |
| Hloov ua tau zoo | 23% |
| Kub | |
| Ua haujlwm kub | 25 degree |
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