1W 940nm VCSEL Laser Chip
Qhov ntsug-kab noj hniav nto-emitting diode lasers tau dhau los ua neeg nyiam nyob rau peb lub xyoo dhau los, vim nws tus nqi qis thiab kev ntseeg siab. Lawv yog ib qho kev xaiv zoo rau kev sib txuas lus luv luv thiab kev sib txuas lus. Lawv tso zis zog thiab wavelength sib txawv nyob ntawm seb yuav tsum tau thov
Qhov ntev
pem hauv ntej: 32 mil × 32 mil (800 ± 25um × 800 ± 25um)
Rov qab: 32 mil × 32 mil (800 ± 25um × 800 ± 25um)
Thickness: 6mil (150 ± 25um)
Cov ntaub qhwv ntsej muag: 100 ± 10um × 730 ± 15um
Aperture: 10 ± 2 hli
Emission suab: 48 ± 1 um
Tus naj npawb ntawm Emission: 233
Yam ntxwv
| Parameter | Ntaus. |
| Center Wavelength | 940 ± 10nm |
| Tso zis zog | 1W |
| Forward Voltage | 1.8V |
| Ib nrab Wave | 2.4nm ua |
| Slope Efficiency | 0.87W/A |
| Dominant Wavelength | 40.7% |
| Wavelength Temp. Coefficient | 0.07nm / degree |
| Rov qab tam sim no | 1 ua |
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