
1. Txoj cai ntawm laser bar ntim
Laser bar ntim yog txheej txheem ntawm kev sib koom ua ke ntau lub laser diode tuav rau hauv ib pob. Cov qauv ntim no feem ntau yog siv rau lub zog hluav taws xob semiconductor lasers, xws li ntsug stacking (V-stack) thiab kab rov tav array (H-array). Lub hom phiaj tseem ceeb ntawm kev ntim khoom yog txhawm rau ua kom lub zog tso zis ntawm lub laser thaum tswj qhov zoo thiab ruaj khov ntawm cov nqaj.
Thaum lub sij hawm ntim txheej txheem, lub laser diode tuav yog precisely teem thiab tsau rau ntawm lub dab dej kub. Lub luag haujlwm ntawm lub dab dej kub yog kom dissipate lub tshav kub uas tsim los ntawm laser diode tuav kom nws ruaj khov ua haujlwm kub. Tsis tas li ntawd, cov qauv ntim kuj suav nrog cov khoom siv xws li electrodes, cov khoom siv kho qhov muag, thiab cov khoom sib txuas kom tso tawm cov laser rau cov khoom siv sab nraud.
2. Cov kev sib tw hauv cov txheej txheem ntim khoom
Cov teeb meem tseem ceeb hauv cov txheej txheem ntim khoom suav nrog kev tswj xyuas qhov chaw siab, tswj cov khoom siv hluav taws xob zoo, thiab kev tswj xyuas qhov kub thiab txias. Cov kev cov nyom no xav tau cov cuab yeej siv siab thiab thev naus laus zis los daws kom ntseeg tau qhov zoo thiab kev ntseeg siab ntawm pob.
Nyob rau hauv cov nqe lus ntawm kev tswj txoj hauj lwm, nws yog ib qho tsim nyog los xyuas kom meej tias txoj hauj lwm thiab lub kaum sab xis ntawm txhua lub laser diode bar yog qhov tseeb heev los xyuas kom meej qhov zoo thiab ruaj khov ntawm cov nqaj. Nyob rau hauv cov nqe lus ntawm eutectic zoo tswj, nws yog tsim nyog los tswj lub eutectic kub thiab lub sij hawm los xyuas kom meej tias lub eutectic zoo ntawm lub laser diode bar thiab lub tshav kub dab dej yog pom zoo. Nyob rau hauv cov nqe lus ntawm kev tswj qhov kub thiab txias, nws yog ib qho tsim nyog los xyuas kom meej tias qhov kub thiab txias hloov ntawm lub laser diode bar thaum lub sij hawm ntim cov txheej txheem ua tau raws li tus qauv tsim kom tsis txhob cuam tshuam rau kev ua haujlwm ntawm lub laser.
Cov txheej txheem kev sib txuas yog cov kauj ruam tseem ceeb tshaj plaws hauv kev tsim cov laser diode. Nyob rau hauv cov txheej txheem no, cov txheej txheem kub-tin eutectic bonding txheej txheem yog siv los txuas ib leeg-tube los yog bar-bar nti mus rau lub dab dej kub substrate. Cov ntawv cog lus ntawm cov nti thiab cov dab dej kub hauv qab feem ntau yog kub-tin (AuSn) solder siv eutectic bonding technology. HPLD chips tuaj yeem yog ib lub raj laser chips lossis ntau lub raj bar-bar laser chips. Cov txheej txheem sib txuas yog qhov tseem ceeb rau kev ua haujlwm kho qhov muag thiab kev ntseeg tau ntawm HPLD cov khoom. Qee qhov kev sib tw ntawm cov txheej txheem tseem ceeb no tau hais qhia hauv qab no:
High precision
Lub laser diode muaj high-precision txoj hauj lwm yuav tsum tau nyob nruab nrab ntawm lub teeb-emitting nto ntawm ib leeg-tube los yog bar-bar nti thiab ntug ntawm lub tshav kub dab dej substrate. Feem ntau, qhov tshwm sim tom qab kev sib raug zoo yuav tsum tsis muaj kev nyuaj siab los ntawm lub teeb-emitting nto mus rau ntug ntawm lub substrate, thiab lub protrusion ntawm lub teeb-emitting nto yuav tsum tsawg tshaj li 5-10μm. Txog qhov kawg no, qhov kev sib raug zoo ntawm lub tshuab sib txuas yuav tsum yog feem ntau<±2.5μm. The edges of the laser tube die and the substrate may also have a tolerance of <1μm. Therefore, the accuracy of the machine must be <±1.5μm.
Eutectic Zoo
Ntxiv rau qhov tseeb ntawm txoj hauj lwm, qhov kub thiab txias profile hauv cov txheej txheem reflow kuj tseem ceeb heev rau cov txheej txheem laser diode bonding. Thaum lub sij hawm eutectic txheej txheem, tshwj xeeb yuav tsum tau them nyiaj mloog mus ua kom tau ib tug hloov maj mam, uniform thiab void-dawb eutectic interface ntawm lub nti thiab lub tshav kub dissipation substrate rau zoo thiab uniform kub dissipation. Qhov no yuav tsum tau lub tshuab sib txuas kom muaj qhov tseeb thiab zoo ib yam eutectic reflow kub tswj tag nrho cov chaw sib txuas. Cov txheej txheem HPLD kev sib txuas yuav tsum muaj qhov programmable uniform eutectic cua sov theem nrog ceev cua sov / txias, thiab kub thaum lub sij hawm eutectic yuav tsum nyob twj ywm. Cov cua sov theem kuj yuav tsum muaj cov roj tiv thaiv npog los tiv thaiv oxidation ntawm eutectic nto, yog li tau txais zoo wettability thiab tsim cov void-dawb interface thaum txias.
Coplanarity & Void-dawb
As the power of laser diode chips increases, single-tube chips become longer, and the aspect ratio of certain chip sizes becomes larger, such as aspect ratio>10. Bar-type laser diodes yog qhov nyuaj heev vim lawv qhov loj ntawm qhov chaw sib txuas, uas ua kom cov yam ntxwv tsis xws luag tom qab kev sib txuas, xws li qhov tsis muaj nqi% thiab bar qaij lub kaum sab xis. Qhov tseeb coplanarity ntawm lub laser diode ib leeg lossis bar nti thiab lub dab dej kub hauv qab kuj tseem ceeb heev vim tias nws cuam tshuam rau qhov tsis muaj nqi thiab ua rau muaj kev ntxhov siab. Yog li, qhov tsis muaj qhov tseeb coplanarity tuaj yeem cuam tshuam rau kev ua haujlwm thiab kev ntseeg siab ntawm cov khoom siv laser diode. Yog tias tsis muaj kev tswj hwm kev sib raug zoo, lub bar yuav ua rau muaj kev ntxhov siab nyob hauv qhov bar tom qab tsim eutectic, uas feem ntau hu ua "smile" nkhaus [3]. Cov chips ntev yuav ua rau tsis sib xws thaum tshav kub kub dissipation, uas ua rau thermal stress raws qhov ntev ntawm ib nti. Thaum lub sij hawm eutectic reflow, ntau qhov sib txawv ntawm ib leeg lossis laser bar chips yuav tsum muaj kev sib koom ua ke sib txawv thiab kev tswj xyuas meej.
Siab Mix & Fast Production
Kev lag luam laser diode tam sim no nyob rau hauv lub xeev ntawm kev loj hlob sai thiab kev hloov pauv. Vim tsis muaj kev tsim qauv, cov tuam txhab tsim khoom yuav tsum tiv thaiv qhov kev xav tau loj hlob thiab cov txheej txheem ntim khoom sib txawv. Muaj ntau qhov kev hloov pauv hauv kev lag luam laser diode ib nti-rau-substrate (CoS) thiab bar-rau-substrate (BoS) tsim los ntawm cov neeg muag khoom sib txawv. Laser diode pob tsim muaj ntau cov ntaub ntawv ntim kom haum rau kev siv sib txawv. Yog li ntawd, kev sib xyaw ntau lawm yog lwm qhov kev sib tw loj hauv laser diode manufacturing.
Chip Scheme
Txhawm rau ua kom tau raws li cov kev cov nyom ntawm cov txheej txheem nti tso rau hauv cov ntawv thov laser diode, cov tuam ntxhab xav tau qhov kev txiav txim siab ultra-siab, siab-ceev, hloov tau yooj yim tsis siv neeg nti tso tshuab. Lub tshuab xav tau suav nrog qhov raug<±1.5μm, programmable force control, friction movement in the eutectic phase (micro-movement along X, Y, Z under the action of controlled force) and other features.
3. Qhov tseem ceeb ntawm laser bar ntim
Laser bar ntim yog ib qho ntawm cov thev naus laus zis tseem ceeb kom ua tiav high-power, high-efficiency thiab high-stability semiconductor lasers. Los ntawm kev sib koom ua ke ntau lub laser diode tuav rau hauv ib pob, lub zog tso zis ntawm lub laser tuaj yeem txhim kho tau zoo thaum tswj xyuas qhov zoo thiab ruaj khov ntawm cov nqaj. Cov qauv ntim no tau siv dav hauv laser txiav, laser vuam, laser npav thiab lwm yam, muab kev txhawb zog rau kev tsim khoom thiab kev tshawb fawb.
Feem ntau, laser bar ntim yog ib qho nyuaj thiab tseem ceeb thev naus laus zis, uas yog qhov tseem ceeb rau kev ua tiav high-power, high-efficiency thiab high-stability semiconductor lasers. Nrog rau kev nce qib ntawm kev tshawb fawb thiab thev naus laus zis tsis tu ncua, laser bar ntim tshuab yuav txuas ntxiv txhim kho thiab txhim kho, muab cov khoom lag luam laser zoo dua rau ntau yam kev siv.
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