300W 808nm QCW Diode Laser Npav Bar
Cov yam ntxwv tseem ceeb:
InGaAs-raws li semiconductors
Optical tso zis hwj chim: 300 watts qcw
Lub neej ntev, kev ntseeg siab
Bare bar yog ib qho array ntawm ib tug neeg semiconductor laser chips, nrog rau cov zis tso zis los ntawm kaum ob ntawm Watts mus rau ob peb puas Watts.
Peb tus txheej txheem facet passivation ua kom ntseeg tau tias yuav tsum tau ua los ntawm cov ntawv thov nruj tshaj plaws.
Siv dav hauv laser kev zoo nkauj, laser cladding, laser txiav, twj tso kua mis, thiab lwm yam
Specification:
Yam khoom: LC808SB300
|
Kho qhov muag |
|
|
Central Wavelength |
808nm ua |
|
Optical tso zis zog |
300W |
|
Ua hauj lwm hom |
QCW |
|
Spectrum Dav |
4nm ua |
|
Tus naj npawb ntawm Emitter |
60 |
|
Emitter Dav |
120μm |
|
Emitter Pitch |
160μm |
|
Filling Factor |
75 feem pua |
|
Bar Dav |
9900-10100μm |
|
Cavity Length |
1490-1510μm |
|
Thickness |
110-150μm |
|
Fast Axis Divergence (FWHM) |
39 Deg |
|
Slow Axis Divergence (FWHM) |
10 Deg |
|
Polarization hom |
TE |
|
Slope Efficiency |
1.15W/A |
|
Hluav taws xob |
|
|
Kev khiav hauj lwm tam sim no Iop |
280A |
|
Threshold Current Ith |
30A |
|
Ua haujlwm Voltage Vop |
1.8V |
|
Hloov ua tau zoo |
55 feem pua |
|
Kub |
|
|
Ua haujlwm kub |
15-35 degree |
|
Wavelength Temperature Coefficient |
0.28nm/degree |
PIV Chart
![)%3SMG2R0])_EE8{GGL(%HE](/Content/uploads/202098745/202003181500306962496.jpg)
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