10W 808nm Ib Emitter Laser Chip
Peb tsim peb cov khoom siv semiconductor raws li kev tswj hwm nruj tshaj plaws. Peb tsuas yog ua haujlwm nrog lub xeev-ntawm-tus-kos duab epitaxy, ua thiab facet txheej tshuab. Peb cov tuav, semi-bars thiab ib qho emitters rau high-power diode lasers yog li ua tau raws li qhov xav tau tshaj plaws: Lawv tsis tshua muaj kev ntseeg siab, ua haujlwm zoo thiab ruaj khov. Peb cov khoom semiconductor tau yooj yim sib sau ua ke siv cov txheej txheem soldering.
Feature:
808nm nruab nrab wavelength nrog 3nm kam rau ua, 10W tso zis zog
CW ua haujlwm hom
Ntau yam ntawm bar configurations
Siab zog thiab siab beam siv IR laser hluav taws xob
Daim ntawv thov:
Kev kho mob thiab Aesthetic
Solid-state laser twj tso kua mis
Daim ntawv thov Lidar
Kev ua cov khoom siv
Daim ntawv qhia:
Yam khoom no: LC808SE10
| Kho qhov muag | Hom |
| Central Wavelength | 808nm ua |
| Tso zis zog | 10W |
| Spectrum Dav | 6nm ua |
| Emitter Dav | 190 ua |
| Chip Dav | 500 ua |
| Cavity Length | 4000 ua |
| Thickness | 150 ua |
| Slope Efficiency | 0.5W/A |
| Hluav taws xob | |
| Kev khiav hauj lwm tam sim no Iop | 13A |
| Threshold Current Ith | 0.8A |
| Kev khiav hauj lwm Voltage Vop | 2V |
| Kub | |
| Kev ntsuas kub | 25 degree |
| Wavelength Temperature Coefficient | 0.35nm/degree |
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