20W 976nm Ib Emitter Laser Chips Rau Kev Kho Mob Thiab Zoo Nkauj
Nta:
- CW ua hauj lwm hom, 1W / A nqes hav efficiency
- Tsawg beam divergence thiab me me lub teeb emitting aperture
- Ib leeg Emitter Laser Chip
- Optimized epitaxial qauv tsim 5. High zog conversion efficiency
Daim ntawv thov:
- Kev kho mob thiab Aesthetic
- Laser Illumination
- Dawb chaw kho qhov muag kev sib txuas lus
Laser nti yog ib qho tseem ceeb ntawm cov cuab yeej tseem ceeb rau kev txhim kho laser kev lag luam thiab cov tub ntxhais kev lag luam ntawm tag nrho cov kev lag luam laser chain.20W 976nm SIingle Emitter Laser Chip nrog CW ua haujlwm hom, thiab tsuas yog 1 emitter. Lub zog hloov dua siab tshiab tuaj yeem ncav cuag 54%.
Technical parameter
Yam khoom no: LC976SE20
Yam khoom: 20W 976nm Ib Emitter Laser Chips
|
Kho qhov muag |
Ntaus |
|
Central Wavelength |
976nm ua |
|
Tso zis zog |
20W |
|
Ua hauj lwm hom |
CW |
|
Spectrum Dav |
4nm ua |
| Tus naj npawb ntawm Emitter | 1 |
|
Emitter Dav |
190μm |
| Cavity dav | 500 ua |
|
Cavity Length |
4000μm |
|
Cavity Thickness |
130μm |
| Fast Axis Divergence | 29 Deg |
| Slow Axis Divergence | 9 Deg |
| Polarization hom | TE |
| Slope Efficiency | 1W/A |
|
Hluav taws xob |
|
|
Kev khiav hauj lwm tam sim no Iop |
23A |
|
Threshold Current Ith |
1.2A |
|
Ua haujlwm Voltage Vop |
1.7V |
|
Hloov ua tau zoo |
54% |
|
Kub |
|
|
Ua haujlwm kub |
25 degree |
|
Wavelength Temperature Coefficient |
0.35nm / degree |
LIV Curve:
Laser chips yog cov khoom tseem ceeb ntawm kev siv tshuab optoelectronic niaj hnub, thiab lawv cov khoom siv txiav txim siab txog kev ua haujlwm thiab daim ntawv thov ntawm lasers. Raws li cov khoom siv sib txawv, cov chips laser feem ntau muab faib ua gallium nitride (GaN) -raws li lub teeb xiav, gallium arsenide (GaAs), indium phosphide (InP), thiab lwm yam. Cov ntaub ntawv no feem ntau muaj nyob rau hauv daim ntawv ntawm ternary lossis quaternary compounds, thiab muaj lawv tus kheej cov yam ntxwv thiab kev siv tau zoo.
Gallium nitride (GaN) yog dav bandgap semiconductor cov khoom siv dav siv hauv lub teeb xiav lasers vim nws cov khoom siv hluav taws xob zoo heev thiab cov thermal conductivity. Gallium nitride-raws li lasers muaj cov yam ntxwv ntawm lub zog siab, kev ua haujlwm siab thiab lub neej ntev, thiab tau siv dav hauv cov teb xws li kev nyeem CD, tso saib thev naus laus zis thiab khoom siv kho mob.
Gallium arsenide (GaAs) yog ib qho tseem ceeb III -V semiconductor khoom siv dav hauv lasers hauv infrared thiab ze rau -infrared bands. Cov khoom siv GaAs tuaj yeem ua ke nrog cov ntsiab lus xws li txhuas thiab antimony los tsim ntau yam sib txuas, xws li aluminium gallium arsenic (AlGaAs) thiab indium gallium arsenic (InGaAs). Cov ntaub ntawv no tau siv dav hauv electro- kev sib txuas lus kho qhov muag, kho qhov muag thiab radar thev naus laus zis.
Cim npe nrov: 20w 976nm ib leeg emitter laser chips lwm tus neeg, manufacturers Tuam Tshoj, hoobkas, lag luam wholesale, ua nyob rau hauv Suav teb