Hauj lwm lawm
1W 940nm VCSEL Laser Chip
Mechanical Specifications
Qhov ntev
pem hauv ntej: 51 mil × 45 mil (1280 ± 25um × 1130 ± 25um)
Rov qab: 51 mil × 45 mil (1280 ± 25um × 1130 ± 25um)
Thickness: 6mil (150 ± 25um)
Cov ntawv cog lus: 92 ± 15um × 1070 ± 15um × 2
Aperture: 7 ± 2 hli
Emission suab: 44 ± 1 um
Tus naj npawb ntawm Emission: 621
Cov ntaub ntawv thiab cov qauv
substrate: GaAs
p-metallization: Au alloy
n-metallization: Au alloy
Epitaxial structure: InGaAs MQWs
Yam ntxwv
| Parameter | Ntaus. |
| Center Wavelength | 940 ± 10nm |
| Tso zis zog | 3W |
| Forward Voltage | 1.95V |
| Ib nrab Wave | 1.1nm ua |
| Slope Efficiency | 1.02W/A |
| Dominant Wavelength | 44.1 feem pua |
| Wavelength Temp. Coefficient | 0.07nm/degree |
| Rov qab tam sim no | 1 ua |
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